Compact models are used by circuit designers using SPICE modeling tools to design analog or digital circuits for high-frequency and/or high-power circuits for many different applications. The process of translating the device’s performance into an accurate model is an interesting and complex process.
If you are interested in learning more about the ASM-HEMT model for GaN HEMTs from its developer, please consider joining us for this insightful presentation.
Abstract:
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and their associated RF and power-electronic applications have been a topic of aggressive academic and industrial research over the past couple of decades. This is due to the commendable level of performance promised by the GaN material system and the hetero-junction that it forms with AlGaN, leading to features such as high breakdown voltage, high mobility, high saturation velocity, high sheet carrier density, the ability to withstand high operating temperatures etc. In order to take full advantage of these properties and to translate them into viable circuit applications a fully robust and accurate GaN HEMT model is of prime importance. In this talk, I will present our ASM-HEMT model for GaN-based power and RF devices. I will also briefly talk about our efforts in modeling of SiC based MOS transistors.
Speaker(s): Yogesh Singh Chauhan,
Agenda:
8:30 to 9:00 am Eastern Time, sign in
9:00 to 10:00 am Eastern Time, Seminar
10:00 am to 10:30 am Eastern Time, Questions and discussions.
Virtual: https://events.vtools.ieee.org/m/420980