Room: 334, Bldg: Loyola Science Center (LSC), 204 Monroe Ave, Physics and Engineering Dept, University of Scranton, Scranton, Pennsylvania, United States, 18510

Radiation resistant photovoltaics (PV) for lunar surface applications has been increasingly important for application on the lunar surface. Graphene-based Schottky diodes with semiconductor various radiation resistant layers is a promising choice for lunar PV due to (i) graphene high photon transparency (ii) and radiation resistant semiconducting layers such as GaN. We propose a G/n-GaN Schottky diode where the metal is replaced by graphene grown on top of a thin oxide layer resting on the semiconductor. Photoexcitation of carriers occurs in both graphene and the semiconductor regions. the oxide layer prevents or reduces recombination of photo-carriers. we propose a model where photo-generated electrons cross the PV device in both directions (from Gr to the semiconductor and vice versa) via two mechanisms by (a) thermionic emission and (b) quantum tunneling. We outline the method of obtaining net current densities (thermionic and tunneling). Tunneling transmission and thermionic carrier escape and current are outlined along with the advantage of high current density generation in the harsh lunar surface environment. Co-sponsored by: EDS Student Branch, Physics & Engineering Dept, University of Scranton Speaker(s): Argyrios Agenda: Professional meeting at the University of Scranton Room: 334, Bldg: Loyola Science Center (LSC), 204 Monroe Ave, Physics and Engineering Dept, University of Scranton, Scranton, Pennsylvania, United States, 18510