IEEE Memory Day: History, Current Status, and Future of Semiconductor Memory

Co-sponsored by: Nanotechnology Council-Northern Virginia/Washington DC Chapter and Micron Technology Foundation.

IEEE Electron Devices Society-Northern Virginia/Washington DC Chapter is pleased to announce an IEEE Semiconductor Memory Day Event on November 3, 2016. This event will consist of four presentations and a Fab tour. Four guest speakers will give their talks about the History of Semiconductor Memory, Current Landscape of Memory Industry, Future Emerging Memory, and Space/Radiation Effect in Memory Devices, respectively. After the presentations, we will host a Fab window tour to allow participants to experience the state-of-the-art semiconductor facility of Micron Technology Memory Fab and interact with Micron engineers. This event will provide a great opportunity for college students and anyone who has never been to a semiconductor Fab before to learn the advanced semiconductor manufacturing facility/processes. At the end of the Memory Day, you will have a good understanding about the entire spectrum of Semiconductor Memory. 

This event is co-sponsored by Nanotechnology Council-Northern Virginia/Washington DC Chapter and Micron Technology Foundation.

***Participants are not required to stay through the entire event and they can attend part of the event based on their own schedule, but pre-registration is required for security badges preparation.

Speaker(s): Rashmi Jha, Nadim Haddad 

Agenda:

Note: Pre-Registration is required to prepare security badges and get headcount.

Date:  November 3, 2016, Thursday  

Location: Micron Technology Virginia, 9600 Godwin Drive, Manassas, VA 20110

Agenda: 

08:30AM-09:50AM        Check-in/light refreshment

09:50AM-9:55AM:        Introduction/Welcome by IEEE Electron Devices Society-Northern Virginia/Washington DC chapter

09:55AM-10:00AM:      Welcome by MTV Site Leadership Team member

10:00AM-10:50AM:      History of Memory and Manassas Fab (Dinu Patel and Nadim Haddad, IBM Retirees)

10:50AM-11:30AM:      Current Landscape of Memory Industry (John Zhang, Micron Technology)

11:30AM-12:30PM:      Emerging Memory:Resistive Random Access Memory (ReRAM) (Rashmi Jha, University of Cincinnati)  

12:30PM-1:30PM:        Complimentary lunch

1:30PM–2:30PM:          Radiation Effects in Memories – Mechanisms and Mitigation (Nadim Haddad, IEEE Fellow/IBM Retiree)

2:30PM-3:30PM:          Fab window tour (Micron Engineers)

Directions to Micron:

**From I-66 Corridor Exit: VA-234 S on Prince William Pkwy. Exit 44 toward Manassas/Dumfries Left: University Blvd. until you reach first light, go directly through the light End: 9600 Godwin Dr

**From I-95 Corridor Exit: VA-234 N Exit 152 toward Manassas Take: 28 N ramp toward Manassas Merge: Nokesville Rd/ VA-28 Left: Godwin Dr. End: 9600 Godwin Dr.

Parking Information: 

Please follow the “Visitor Parking” signs to designated parking areas. Then proceed to Building 130 (brown in color) and give your name (or group designation) to the receptionist for check-in.

Contact: John Zhang, Chair, IEEE-Electron Devices Society Northern Virginia /Washington DC Chapter, email:  john.zhang.us@IEEE.org

Location:
Room: Classroom3
Bldg: Building 130
Micron Technology Virginia
9600 Goodwin Dr.
Manassas, Virginia
20110