2024 IEEE Nanotechnology Council NTC TC10 Modeling and Simulation November Webinar

Abstract: Join us for an in-depth exploration of Nanoscale MOSFET Simulation using the Subband Boltzmann Transport Equation (SBTE), powered by the advanced GTS Nano Device Simulator (NDS). This webinar will guide you through the fundamentals of simulating MOSFETs at the nanoscale, focusing on device performance and transport phenomena. We will demonstrate live simulations and cover not only traditional silicon-based MOSFETs but also cutting-edge 1D and 2D materials like transition metal dichalcogenides (TMDs), graphene, and carbon nanotubes. Attendees will gain hands-on insights into modeling these materials and learn how to leverage the SBTE for advanced device design. Co-sponsored by: TC 10 Co-Chair, Josef Weinbub Agenda: Virtual: https://events.vtools.ieee.org/m/444325