This Friday 3 pm is open to students (primarily Air Force Institute of Technology, but all invited) presenting a 15 min (or so) talk on what interests them. Open to any & all students, so pass the word. This is a good place for young folks to teach something new to old folks who still like to learn, & / or forgot what it was like to be young. Co-sponsored by: Wright-Patt Multi-Intelligence Development Consortium (WPMDC), The DOD & DOE Communities Speaker(s): Eric Fairchild, Agenda: TITLE: GaN COTS HEMT Reliability Test Plan ABSTRACT: Commercial off the shelf (COTS) Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are widely used in high power/frequency applications due to GaN’s electrical properties which include a wide direct bandgap of approximately 3.4eV. GaN’s inherent wide spacing between the valence band maximum and conduction band minimum are what allow GaN to perform at higher power levels, frequencies, and temperature conditions than that of conventional semiconductor materials, such as silicon. However, unlike silicon-based devices which have established qualification standards, qualifying GaN devices into new and existing systems takes additional time because there is currently no widely accepted standard for evaluating the reliability of GaN transistors. This test plan seeks to detail the I-V characterization and reliability testing on a number of GaN COTS devices from various manufacturers to identify gate leakage current as an identifying factor of device reliability. Virtual: https://events.vtools.ieee.org/m/320618