IEEE EDS Distinguished Lecture: 2.5D/3D Integration Technology

Room: Classroom 1, Bldg: Micron Office Building 130

Co-sponsored by: Nanotechnology Council-Northern Virginia/Washington DC Chapter and the IEEE Women In Engineering Northern Virginia group IEEE Electron Devices Society-Northern Virginia/Washington DC Chapter is pleased to announce an IEEE EDS Distinguished Lecture Event on Wednesday, September 14, 2016.  Dr. Mukta Farooq, an IEEE EDS Distinguished Lecturer and GlobalFoundries Fellow, will give a technical lecture about 2.5D/3D Integration Technology. In this talk, she will review the various types of 2.5D and 3D integration and explain why they offer significant advantages over conventional methods. This event is co-sponsored by Nanotechnology Council-Northern Virginia/Washington DC Chapter and the IEEE Women In Engineering Northern Virginia group and it will be hosted at Manassas, Micron Technology Virginia facility.   Speaker(s): Mukta Farooq, Agenda: 5:30-6:00PM: Refreshments/Networking 6:00-6:10PM: Introduction 6:10-7:00PM: Lecture 7:00-7:15PM: Q&A          7:15PM: Adjourn Note: Registration is required for temporary security badge preparation       Location: Room: Classroom 1 Bldg: Micron Office Building 130 Micron Technology Virginia 9600 Godwin Drive Manassas, Virginia 20110

IEEE EDS Distinguished Lecture: 2.5D/3D Integration Technology

Room: Classroom 3, Bldg: Micron Office Building 130

Co-sponsored by: Nanotechnology Council-Northern Virginia/Washington DC Chapter and the IEEE Women In Engineering Northern Virginia group IEEE Electron Devices Society-Northern Virginia/Washington DC Chapter is pleased to announce an IEEE EDS Distinguished Lecture Event on Wednesday, September 14, 2016.  Dr. Mukta Farooq, an IEEE EDS Distinguished Lecturer and GlobalFoundries Fellow, will give a technical lecture about 2.5D/3D Integration Technology. In this talk, she will review the various types of 2.5D and 3D integration and explain why they offer significant advantages over conventional methods. This event is co-sponsored by Nanotechnology Council-Northern Virginia/Washington DC Chapter and the IEEE Women In Engineering Northern Virginia group and it will be hosted at Manassas, Micron Technology Virginia facility.   Speaker(s): Mukta Farooq, Agenda: 5:30-6:00PM: Refreshments/Networking 6:00-6:10PM: Introduction 6:10-7:00PM: Lecture 7:00-7:15PM: Q&A          7:15PM: Adjourn Note: Registration is required for temporary security badge preparation   Directions to Micron: From I-66 Corridor Exit: VA-234 S on Prince William Pkwy. Ex IEEE Distinguished Lecturerit 44 toward Manassas/Dumfries Left: University Blvd. until you reach first light, go directly through the light End: 9600 Godwin Dr From I-95 Corridor Exit: VA-234 N Exit 152 toward Manassas Take: 28 N ramp toward Manassas Merge: Nokesville Rd/ VA-28 Left: Godwin Dr. End: 9600 Godwin Dr. Parking Information: Please follow the “Visitor Parking” signs to designated parking areas. Then proceed to Building 130 (brown in color) and give your name (or group designation) to the receptionist for check-in.     Location: Room: Classroom 3 Bldg: Micron Office Building 130 Micron Technology Virginia 9600 Godwin Drive Manassas, Virginia 20110

IEEE EDS Distinguished Lecture: 2.5D/3D Integration Technology

Room: Classroom 1, Bldg: Micron Office Building 130

Co-sponsored by: IEEE-EDS Chair - Mr. John Zhang IEEE Electron Devices Society-Northern Virginia/Washington DC Chapter is pleased to announce an IEEE EDS Distinguished Lecture Event on Wednesday, September 14, 2016.  Dr. Mukta Farooq, an IEEE EDS Distinguished Lecturer and GlobalFoundries Fellow, will give a technical lecture about 2.5D/3D Integration Technology. In this talk, she will review the various types of 2.5D and 3D integration and explain why they offer significant advantages over conventional methods. This event is co-sponsored by Nanotechnology Council-Northern Virginia/Washington DC Chapter and the IEEE Women In Engineering Northern Virginia group and it will be hosted at Manassas, Micron Technology Virginia facility.   Speaker(s): Dr. Mukta Farooq, Agenda: 5:30-6:00PM: Refreshments/Networking 6:00-6:10PM: Introduction 6:10-7:00PM: Lecture 7:00-7:15PM: Q&A  7:15PM: Adjourn Note: Registration is required for temporary security badge preparation Location: Room: Classroom 1 Bldg: Micron Office Building 130 Micron Technology Virginia 9600 Godwin Drive Nanassas, Virginia 20110

IEEE Memory Day: History, Current Status, and Future of Semiconductor Memory

Room: Classroom3, Bldg: Building 130

Co-sponsored by: Nanotechnology Council-Northern Virginia/Washington DC Chapter and Micron Technology Foundation. IEEE Electron Devices Society-Northern Virginia/Washington DC Chapter is pleased to announce an IEEE Semiconductor Memory Day Event on November 3, 2016. This event will consist of four presentations and a Fab tour. Four guest speakers will give their talks about the History of Semiconductor Memory, Current Landscape of Memory Industry, Future Emerging Memory, and Space/Radiation Effect in Memory Devices, respectively. After the presentations, we will host a Fab window tour to allow participants to experience the state-of-the-art semiconductor facility of Micron Technology Memory Fab and interact with Micron engineers. This event will provide a great opportunity for college students and anyone who has never been to a semiconductor Fab before to learn the advanced semiconductor manufacturing facility/processes. At the end of the Memory Day, you will have a good understanding about the entire spectrum of Semiconductor Memory.  This event is co-sponsored by Nanotechnology Council-Northern Virginia/Washington DC Chapter and Micron Technology Foundation. ***Participants are not required to stay through the entire event and they can attend part of the event based on their own schedule, but pre-registration is required for security badges preparation. Speaker(s): Rashmi Jha, Nadim Haddad  Agenda: Note: Pre-Registration is required to prepare security badges and get headcount.   Date:  November 3, 2016, Thursday   Location: Micron Technology Virginia, 9600 Godwin Drive, Manassas, VA 20110   Agenda:  08:30AM-09:50AM        Check-in/light refreshment 09:50AM-9:55AM:        Introduction/Welcome by IEEE Electron Devices Society-Northern Virginia/Washington DC chapter 09:55AM-10:00AM:      Welcome by MTV Site Leadership Team member 10:00AM-10:50AM:      History of Memory and Manassas Fab (Dinu Patel and Nadim Haddad, IBM Retirees) 10:50AM-11:30AM:      Current Landscape of Memory Industry (John Zhang, Micron Technology) 11:30AM-12:30PM:      Emerging Memory:Resistive Random Access Memory (ReRAM) (Rashmi Jha, University of Cincinnati)     12:30PM-1:30PM:        Complimentary lunch   1:30PM–2:30PM:          Radiation Effects in Memories – Mechanisms and Mitigation (Nadim Haddad, IEEE Fellow/IBM Retiree) 2:30PM-3:30PM:          Fab window tour (Micron Engineers)                Directions to Micron: **From I-66 Corridor Exit: VA-234 S on Prince William Pkwy. Exit 44 toward Manassas/Dumfries Left: University Blvd. until you reach first light, go directly through the light End: 9600 Godwin Dr **From I-95 Corridor Exit: VA-234 N Exit 152 toward Manassas Take: 28 N ramp toward Manassas Merge: Nokesville Rd/ VA-28 Left: Godwin Dr. End: 9600 Godwin Dr.   Parking Information:  Please follow the “Visitor Parking” signs to designated parking areas. Then proceed to Building 130 (brown in color) and give your name (or group designation) to the receptionist for check-in.   Contact: John Zhang, Chair, IEEE-Electron Devices Society Northern Virginia /Washington DC Chapter, email:  [email protected]     Location: Room: Classroom3 Bldg: Building 130 Micron Technology Virginia 9600 Goodwin Dr. Manassas, Virginia 20110